Low-temperature radiation damage effects in a room-temperature radiation-hard surface channel CCD
Room temperature radiation hard p-surface channel CCD's were irradiated at 85/sup 0/K with 2 MeV electrons while being operated as dynamic shift registers. The increased charge trapping in the oxide at liquid nitrogen temperatures produced an input gate threshold voltage shift of -5.6 V at 4 x 10/sup 4/ rads as compared to a -2.2 V shift after 1 x 10/sup 6/ rads at 300/sup 0/K. Except for the input gate voltage, the devices could be operated with the pre-irradiation clock and bias voltages after receiving 4 x 10/sup 4/ rads. A 20% increase in the signal handling capacity was observed after 3 x 10/sup 4/ rads. The output source-follower gain increased by approximately 10% after 4 x 10/sup 4/ rads. The excess flat-band voltage shift and increased transfer inefficiency was annealed by warming the device to 300/sup 0/K with all clock and bias voltages applied.
- Research Organization:
- Naval Research Lab., Washington, DC
- OSTI ID:
- 6545804
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-24:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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360206 -- Ceramics
Cermets
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440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CHARGE-COUPLED DEVICES
HARDENING
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TESTING