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Optical properties of epitaxial CoSi sub 2 /Si and CoSi sub 2 particles in Si from 0. 062 to 2. 76 eV

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.350539· OSTI ID:7306627
;  [1]; ;  [2]
  1. Health and Safety Research Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
  2. Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12181 (United States)
We have measured the optical properties of epitaxial CoSi{sub 2} films on Si from 0.062 to 2.76 eV by ellipsometry and spectrophotometry. The energy dependencies of the dielectric constants show Drude behavior at energies lower than {similar to}0.2 eV with Drude parameters {h bar}{omega}{sub {ital p}}=(5.8{plus minus}0.2) eV and {h bar}/{tau}=(0.09{plus minus}0.02) eV. Using the measured optical constants, the CoSi{sub 2} film is shown to have maximum absorptance at a thickness of {similar to}20 nm for {lambda}{gt}1.4 {mu}m. Finally, we have calculated the absorptance of a composite film of CoSi{sub 2} particles embedded in Si and found that the absorptance peak due to a surface plasmon resonance in the CoSi{sub 2} particles shifts to higher energy as the ellipsoidal particles become more elongated, in agreement with recent observations by Fathauer {ital et} {ital al}. (Phys. Rev. B {bold 44}, 1345 (1991)).
DOE Contract Number:
AC05-84OR21400
OSTI ID:
7306627
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:11; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English

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