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Optical properties of epitaxial CoSi[sub 2] on Si from 0. 062 to 22. 3 eV

Journal Article · · Physical Review, B: Condensed Matter; (United States)
;  [1]; ;  [2]
  1. Health and Safety Research Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
  2. Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12181 (United States)
The optical constants of epitaxial CoSi[sub 2] films on Si from 0.062 to 22.3 eV have been determined by ellipsometry and reflectance measurements. The energy dependencies of the dielectric functions show Drude behavior at energies lower than [similar to]0.2 eV with Drude parameters [h bar][omega][sub [ital p]]=(5.8[plus minus]0.2) eV and [h bar]/[tau]=(0.09[plus minus]0.02) eV. The energy-loss function, calculated from the optical constants, shows two peaks that correspond to the screened plasma oscillation and volume plasma oscillation of all valence electrons. Using the measured optical constants, a composite thin film of epitaxial CoSi[sub 2] particles embedded in Si is shown to have the absorptance peak due to a surface-plasmon resonance in the CoSi[sub 2] particles. The peak shifts to higher energy as the ellipsoidal particles become more elongated, in good agreement with recent observations by Fathauer [ital et] [ital al]. [Phys. Rev. B 44, 1345 (1991)].
DOE Contract Number:
AC05-84OR21400
OSTI ID:
6926024
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 47:8; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English