Structure and property of heteroepitaxial TiO sub 2 /VO sub 2 multilayers

Conference · Mon Jun 01 00:00:00 EDT 1992

OSTI ID:7306475

Chang, H L.M.; Gao, Y; Zhang, T J; Lam, D J

Various types of TiO{sub 2}/VO{sub 2} multilayer structures have been prepared on sapphire substrates by a low-pressure metal-organic chemical vapor deposition process. X-ray diffraction and transmission electron microscopy techniques were used to study the crystallinity and epitaxial relationships of the deposited films. High resolution electron microscopy was used to examine the microstructure of the overlayers and interfaces. Electrical resistivity measurements were performed to investigate the metal-semiconductor phase transition of VO{sub 2} layers in multilayer structures.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 7306475
• Report Number(s): ANL/CP-75751; CONF-9206221--1; ON: DE92018181
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CORUNDUM
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EPITAXY
FILMS
INTERFACES
LAYERS
MICROSCOPY
MICROSTRUCTURE
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SAPPHIRE
SCATTERING
SURFACE COATING
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
VANADIUM COMPOUNDS
VANADIUM OXIDES
X-RAY DIFFRACTION