In situ doping of Si and Si sub 1-x Ge sub x in ultrahigh vacuum chemical vapor deposition
The authors report on the growth of germanium-silicon and silicon epitaxial layers by ultrahigh vacuum/chemical vapor deposition. When an in situ clean is used, films grown at 600C are defect-free by planar section transmission electron microscopy and no oxygen is detectable by secondary ion mass spectroscopy at the growth interface. In situ doping has been studied using B{sub 2}H{sub 6}/H{sub 2} and PH{sub 3}/H{sub 2} as source gases. Ge{sub 0.13}Si{sub 0.87} films doped with boron up to 5{times}10{sup 19} cm{sup {minus}3} have been grown and sharp doping transitions have been obtained. Phosphorus doping concentrations in silicon are limited by a decrease in growth rate with increasing phosphorus flow rate which is attributed to phosphorus blocking of reaction sites. A model for the decrease in growth rate with PH{sub 3}/H{sub 2} flow is proposed which provides a good fit to the measurements.
- OSTI ID:
- 7306162
- Report Number(s):
- CONF-901035--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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