Density of states of quantum-well systems with interface roughness and point defects
Conference
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7306040
- Univ. of Illinois, Chicago (United States)
The authors present selected results from a theoretical study of the local density of states of imperfect quantum-well structures. At the example of GaAs-AlGaAs, they investigate the validity of the virtual crystal approximation (VCA) for ternary alloys, show how quantum confinement can be evidenced in the local density of states (LDOS), discuss antisite defect levels in quantum wells, and finally, analyze the effects of interface roughness on the local density of states.
- OSTI ID:
- 7306040
- Report Number(s):
- CONF-910115--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL MODELS
CRYSTAL STRUCTURE
ENERGY-LEVEL DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
MATHEMATICAL MODELS
PNICTIDES
SUBSTRATES
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL MODELS
CRYSTAL STRUCTURE
ENERGY-LEVEL DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
MATHEMATICAL MODELS
PNICTIDES
SUBSTRATES