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Density of states of quantum-well systems with interface roughness and point defects

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7306040
;  [1]
  1. Univ. of Illinois, Chicago (United States)

The authors present selected results from a theoretical study of the local density of states of imperfect quantum-well structures. At the example of GaAs-AlGaAs, they investigate the validity of the virtual crystal approximation (VCA) for ternary alloys, show how quantum confinement can be evidenced in the local density of states (LDOS), discuss antisite defect levels in quantum wells, and finally, analyze the effects of interface roughness on the local density of states.

OSTI ID:
7306040
Report Number(s):
CONF-910115--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English

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