Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

Journal Article · Wed Aug 01 00:00:00 EDT 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.58039· OSTI ID:6541302

Waters, R G; Yellen, S L; Ruggieri, N F ^[1]; Bour, D P ^[2]

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1. McDonnell Douglas Electronic Systems Co., Elmsford, NY (US)
2. David Sarnoff Research Center, Princeton, NJ (USA)

Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along (100) in GaAs quantum well lasers, causing rapid degradation. In contrast, the (100) dark-line defect is suppressed in the structures with a strained InGaAs quantum well, so that rapid degradation does not occur.

• OSTI ID: 6541302
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:8; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
657002 -- Theoretical & Mathematical Physics-- Classical & Quantum Mechanics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASER MATERIALS
LASERS
MATERIALS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
STRAINS