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Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7305814
; ; ;  [1]
  1. California Inst. of Tech., Pasadena (United States)

The authors have used x-ray photoelectron spectroscopy (XPS) to measure the valence band offset in situ for CdSe/ZnTe (100) heterojunctions grown by molecular-beam epitaxy. XPS measurements were performed for films of CdSe (100) and ZnTe (100), and for heterojunctions consisting of either {approximately}25 {angstrom} of CdSe grown on ZnTe or {approximately}25{angstrom} of ZnTe grown on CdSe. Observations of reflection high energy electron diffraction patterns indicated that CdSe films deposited on ZnTe were grown in cubic zinc blende form, rather than the natural wurtzite structure of CdSe. Measurements yielded a CdSe/ZnTe valence band offset {Delta}E{sub v} = 0.64{plus minus}0.07 eV. The corresponding conduction band offset for CdSe/ZnTe is {Delta}E{sub c} = 1.22{plus minus}0.07 eV for room temperature band gaps for ZnTe and for cubic CdSe of 2.25 and 1.67 eV, respectively.

OSTI ID:
7305814
Report Number(s):
CONF-910115--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English