Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy
- California Inst. of Tech., Pasadena (United States)
The authors have used x-ray photoelectron spectroscopy (XPS) to measure the valence band offset in situ for CdSe/ZnTe (100) heterojunctions grown by molecular-beam epitaxy. XPS measurements were performed for films of CdSe (100) and ZnTe (100), and for heterojunctions consisting of either {approximately}25 {angstrom} of CdSe grown on ZnTe or {approximately}25{angstrom} of ZnTe grown on CdSe. Observations of reflection high energy electron diffraction patterns indicated that CdSe films deposited on ZnTe were grown in cubic zinc blende form, rather than the natural wurtzite structure of CdSe. Measurements yielded a CdSe/ZnTe valence band offset {Delta}E{sub v} = 0.64{plus minus}0.07 eV. The corresponding conduction band offset for CdSe/ZnTe is {Delta}E{sub c} = 1.22{plus minus}0.07 eV for room temperature band gaps for ZnTe and for cubic CdSe of 2.25 and 1.67 eV, respectively.
- OSTI ID:
- 7305814
- Report Number(s):
- CONF-910115--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CHALCOGENIDES
COHERENT SCATTERING
COORDINATION NUMBER
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CUBIC LATTICES
DIFFRACTION
DOPED MATERIALS
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
GRADED BAND GAPS
JUNCTIONS
LIGHT EMITTING DIODES
MATERIALS
N-TYPE CONDUCTORS
SCATTERING
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
VALENCE
X-RAY SPECTROSCOPY
ZINC COMPOUNDS
ZINC TELLURIDES