Charge trapping centers in N-rich silicon nitride thin films

Journal Article · Mon Jul 13 00:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108222· OSTI ID:7281898

Warren, W L ^[1]; Kanicki, J ^[2]; Rong, F C; Poindexter, E H ^[3]; McWhorter, P J ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
2. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
3. U. S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey 07703 (United States)

We have examined the behavior of the Si dangling-bond center in regard to charge trapping in N-rich amorphous hydrogenated silicon nitride thin films. The effects of multiple electron and hole injections were monitored by electron paramagnetic resonance. These results continue to support a model in which the Si dangling bond is a negative U defect in N-rich nitrides, and that a change in charge state of pre-existing diamagnetic positively and negatively charged sites is responsible for the memory properties of silicon nitride thin films.

• OSTI ID: 7281898
• Journal Information: Applied Physics Letters; (United States), Vol. 61:2; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON NITRIDES
TRAPS
AMORPHOUS STATE
CHARGE STATE
DEFECTS
ELECTRON SPIN RESONANCE
HYDROGEN ADDITIONS
THIN FILMS
FILMS
MAGNETIC RESONANCE
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
RESONANCE
SILICON COMPOUNDS
360606* - Other Materials- Physical Properties- (1992-)