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Hall effect and resistivity characterization of doped, electrodeposited CdSe

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2221174· OSTI ID:7279673
;  [1]
  1. Guelph-Waterloo Center for Graduate Work in Chemistry, Univ. of Guelph, Guelph, Ontario N1G 2W1 (CA)
Doped CdSe thin films were electrodeposited onto indium-tin oxide (ITO) substrates that were pretreated with a thin layer of Se, Cd, or In. This paper discusses Hall effect and resistivity measurements performed to determine the effects of doping on the resistivity, carrier concentration, and carrier mobility. Hall effect mobilities were in the range of 1-50 cm{sup 2}/Vs. As doping levels increased, both resistivity and mobility decreased. Samples deposited on vapor treated ITO showed consistently high resistivities and moderate mobility values. When electrochemical treatments of ITO were used, the CdSe properties varied systematically with the amount of Cd or In electrodeposited, exhibiting resistivities in the lower range and carrier densities in the higher range. The temperature dependent resistivity and Hall effect data were analyzed using the Seto-Baccarani model for polycrystalline semiconductors. This model assumes that the dominant transport mechanism is thermionic emission of carriers over the potential barriers that form at the intercrystalline grain boundaries.
OSTI ID:
7279673
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 139:7; ISSN JESOA; ISSN 0013-4651
Country of Publication:
United States
Language:
English