GaAs--Ga/1-x/Al/x/As double-heterostructure distributed-feedback diode lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
- Hitachi, Ltd., Kokubunji, Japan
A review of the lasing characteristics of GaAs-Ga(1-x)Al(x)As double-heterostructure distributed-feedback diode lasers with a corrugated interface, determined under injection pumping is presented. The lowest threshold current density was 2.5 kA/cm/sup 2/ in pulsed operation. The temperature dependence of the laser wavelength was found to be smaller than that of the conventional Fabry-Perot laser.
- OSTI ID:
- 7273236
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 25; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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