GaAs--GaAlAs double-heterostructure injection lasers with distributed feedback

Journal Article · Tue Jul 01 04:00:00 EDT 1975 · IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 436-439

DOI:https://doi.org/10.1109/JQE.1975.1068670· OSTI ID:4154260

Nakamura, M; Aiki, K; Umeda, J; Katzir, A; Yariv, A; Yen, H W

GaAs--GaAlAs double-heterostructure distributed-feedback injection lasers are investigated at temperatures between 80 and 150$sup 0$K under pulsed operation. The optical feedback for laser oscillation is provided by a corrugated interface between the p-GaAs active layer and the p-GaAlAs layer. The corrugation is made by two methods, ion milling and chemical etching, and the latter method is found to give the lower threshold. The laser oscillation occurs in a single longitudinal mode, whose wavelength is stable against the change of the excitation level. The temperature dependence of the wavelength of the distributed-feedback laser is shown to be 0.5 A/deg, which is about $sup 1$$/$$sub 3$ to $sup 1$$/$$sub 4$ that of the conventional Fabry-Perot laser. (auth)

• Research Organization: Originating Research Org. not identified
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-007209
• OSTI ID: 4154260
• Journal Information: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 436-439, Journal Name: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 436-439; ISSN IEJQA
• Country of Publication: United States
• Language: English

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