Study of submicron periodic structures in GaAs-GaAlAs double heterostructures: fabrication and distributed-feedback injection lasers

Thesis/Dissertation · Mon Jan 01 04:00:00 EST 1979

OSTI ID:5142572

Yang, J L

This thesis work was carried out to study submicron-periodic structures on the top of or on one interface of (GaAlAs) heterostructures. These structures were used for DFB injection lasers and optical-pumping experiments. Both electron-resist gratings and photoresist gratings were used as masks for submicron periodic structures. Electron-resist gratings were made by using scanning electron microscope (SEM). We developed the procedure of fabricating submicron electron-resist gratings and determined the effect of parameters such as electron dosage, beam current and developing time upon the quality of the gratings. Photo resist gratings were made holographically. We studied the effect of Gaussian beam characteristic of source light and the standing-wave pattern introduced by the reflection from the substrate, and experimentally produced uniform submicron gratings suitable for DFB lasers. After transferring submicron grating masks onto GaAs substrate by preferential chemical etching, ion-beam milling and radio-frequency sputter etching, GaAs and GaAlAs layers with different doping and composition were grown on the top by liquid phase epitaxy (LPE). Considerable efforts were made to avoid non-uniform wetting and to prevent corrugation on the substrates from meltback during growth. Using GaAs-GaAlAs double heterostructures (DH) with periodic corrugation between substrate and first epitaxial layer, we fabricated DFB injection lasers and tested them at different temperatures near 77/sup 0/K. In conclusion, the major original contributions resulting from this thesis work are fabrication of scanning electron microscope (SEM) electron-resist submicron gratings, analysis of the non-uniformities of holographic photoresist gratings, liquid phase epitaxial (LPE) growth over corrugated GaAs substrates and investigation of optical-pumping of SEM-grating-masked corrugated GaAs structures.

• OSTI ID: 5142572
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
EPITAXY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INTEGRATED CIRCUITS
JUNCTIONS
LASER MATERIALS
LASERS
MASKING
MATERIALS
MICROELECTRONIC CIRCUITS
MINIATURIZATION
OPTICAL PUMPING
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE FINISHING