Vertical-emitting, ring geometry, ultralow-threshold and ultra high-speed quantum-well lasers. Status report, July 1988-January 1989
The main emphasis during this period was placed on the following efforts: (1) establishing a system and a method to fabricate gratings; (2) growing and qualifying quantum-well GaAs/GaAlAs material generated in the low-pressure MOCVD reactor; (3) fabrication of ultralow-threshold buried heterostructure lasers using liquid-phase-epitaxy regrowth; and (4) processing of standard double heterostructure ring lasers in order to determine the losses associated with curved structures. A system was designed and set up for fabrication of submicron gratings in order to be able to generate gratings required for vertically emitting lasers. The system consists of a He-Cd laser which emits light in the 325 nm UV line. The light is spatially filtered and expanded and then split into a couple of beams that create an interference pattern. Using this system, the authors exposed GaAs wafers that were coated with positive photoresist to create gratings with periods in the range of 0.2-1.0 micrometer. (A typical second order grating for GaAlAs laser is 0.24 micrometer).
- Research Organization:
- Ortel Corp., Alhambra, CA (USA)
- OSTI ID:
- 5774324
- Report Number(s):
- AD-A-206427/7/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DEPOSITION
DOCUMENT TYPES
ELECTROMAGNETIC RADIATION
EMISSION SPECTRA
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INTERFERENCE
JUNCTIONS
LASERS
LIQUID PHASE EPITAXY
OPTICAL EQUIPMENT
PNICTIDES
PROGRESS REPORT
RADIATIONS
RING LASERS
RINGS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
SURFACE COATING
ULTRAVIOLET RADIATION