Stress-induced formation of structural defects on the [l brace]311[r brace] planes of silicon

Journal Article · Mon Aug 01 04:00:00 EDT 1994 · Journal of Materials Research; (United States)

DOI:https://doi.org/10.1557/JMR.1994.2057· OSTI ID:7267864

Weng-Sieh, Z ^[1]; Krulevitch, P ^[2]; Gronsky, R ^[1]; Johnson, G C ^[2]

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1. Department of Materials Science Mineral Engineering, University of California-Berkeley, and Lawrence Berkeley Laboratory, Materials Sciences Division, Berkeley, California 94720 (United States)
2. Department of Mechanical Engineering, University of California-Berkeley, Berkeley, California 94720 (United States)

Structural defects occurring on the [l brace]311[r brace] planes of single crystal silicon have been observed near the bottom oxide corner in silicon-on-insulator structures formed by selective epitaxial growth. These [l brace]311[r brace] defects exhibit a preferential orientation and are clustered near the silicon/silicon dioxide interface. This new observation provides an opportunity to study the mechanism of [l brace]311[r brace] defect generation in a system with discernible microstructure and stress state. High resolution electron microscopy combined with analytical and numerical three-dimensional stress modeling are used to show the dependence of these [l brace]311[r brace] defects on the local stress field, and to establish their origin in terms of the homogeneous dislocation nucleation model.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7267864
• Journal Information: Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 9:8; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
INTERFACES
MATHEMATICAL MODELS
MICROSCOPY
MONOCRYSTALS
ORIENTATION
OXIDES
OXYGEN COMPOUNDS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
STRESSES