1/2 l angle 100 r angle l brace 100 r brace dislocation loops in a zinc blende structure
Journal Article
·
· Applied Physics Letters; (USA)
- AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)
We report, for the first time, the identification of extrinsic dislocation loops lying on the {l brace}100{r brace} planes with {1/2}{l angle}100{r angle} types of Burgers vectors in a zinc blende structure in InGaAsP lattice matched to InP. These dislocation loops generated only in nonradiative recombination assisted point-defect motion process under intensed laser light, and form the {l angle}100{r angle} type dark line defects in degraded 1.3 {mu}m wavelength laser diodes.
- OSTI ID:
- 6949273
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:5; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:20001570
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· Journal of Materials Research; (United States)
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Related Subjects
36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER RADIATION
LASERS
LINE DEFECTS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER RADIATION
LASERS
LINE DEFECTS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS