The martensitic transformation in silicon. 2. Crystallographic analysis

Journal Article · Mon Jan 01 04:00:00 EST 1990 · Acta Metallurgica et Materialia; (United States)

DOI:https://doi.org/10.1016/0956-7151(90)90062-L· OSTI ID:7266197

Dahmen, U; Westmacott, K H ^[1]; Pirouz, P; Chaim, R ^[2]

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1. Lawrence Berkeley Lab., CA (United States)
2. Case Western Reserve Univ., Cleveland, OH (United States)

Following the experimental observations of the cubic {yields} hexagonal transformation in silicon, a crystallographic analysis is presented in this paper. It is shown that the transformation is a more general mechanism of accommodating the local strain that is produced when twins in materials with a face-centered-cubic, or diamond cubic, structure intersect. The same crystallography describes the propagation of a second twinning shear into its parent crystal, leading to a hexagonal plate on a (511) plane. The habit plane and orientation relationship predicted by this model are in exact agreement with observations by high-resolution electron microscopy and diffraction of hexagonal platelets in hot-indented silicon reported in Part 1. This agreement suggests that the transformation originates in deformation twinning and may be considered alternatively as a stress-induced martensitic transformation, or a lattice-variant accommodation shear.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7266197
• Journal Information: Acta Metallurgica et Materialia; (United States), Journal Name: Acta Metallurgica et Materialia; (United States) Vol. 38:2; ISSN 0956-7151; ISSN AMATE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALLOYS
CARBON ADDITIONS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALLOGRAPHY
DEFORMATION
ELEMENTS
HEXAGONAL LATTICES
IRON ALLOYS
MARTENSITE
PHASE TRANSFORMATIONS
RELAXATION
SEMIMETALS
SHEAR
SILICON
STRESS RELAXATION
TWINNING