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The formation of hexagonal silicon at twin intersections

Journal Article · · Scr. Metall.; (United States)
The geometric configuration of intersecting twin bands has been considered in the past in the context of dislocation mechanisms and deformation behavior. It is generally found that a twin band is an effective barrier to the propagation of another, noncoplanar, twin band. However, under conditions of sufficiently high local stress twin intersections are possible, subject to conditions of continuity. The problem of intersecting twins has gained renewed interest with the recent hot-indention experiments in silicon. The deformation microstructure consists of twin bands and planar ribbons of hexagonal Si radiating from the area of the indent. Although at high pressures silicon forms in several different crystal structures, only the diamond-cubic structure is stable at atmospheric pressure. Thus the diamond-hexagonal structure that forms during hot indentation of single crystals is a metastable modification. Recent research established its crystallography by means of high-resolution electron microscopy. In particular, it was shown that the transformation from the diamond-cubic to the diamond-hexagonal structure was of a martensitic nature. It has been postulated that the formation of hexagonal Si in the deformation zone is related to multiple twinning, and a detailed crystallographic model for this transformation has been proposed. The present note reports such an observation by high resolution electron microscopy.
Research Organization:
Materials and Chemical Sciences Div., Lawrence Berkeley Lab., Berkeley, CA (US); Dept. of Materials Science and Engineering, Case Western Reserve Univ., Cleveland, OH (US)
OSTI ID:
6108572
Journal Information:
Scr. Metall.; (United States), Journal Name: Scr. Metall.; (United States) Vol. 23:2; ISSN SCRMB
Country of Publication:
United States
Language:
English