Raman scattering from interface modes in Ga sub 1 minus x In sub x Sb/InAs superlattices

Journal Article · Tue Sep 15 00:00:00 EDT 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.46.7200· OSTI ID:7266000

Sela, I ^[1]; Samoska, L A; Bolognesi, C R; Gossard, A C; Kroemer, H ^[2]

---

1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
2. Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, California 93106 (United States) Engineering Material Department, University of California at Santa Barbara, Santa Barbara, California 93106 (United States)

In this study we use Raman scattering from Ga{sub 1{minus}{ital x}}In{sub {ital x}}Sb/InAs grown by molecular-beam epitaxy superlattices to identify and study interface modes. Those modes are localized around the interfaces of the superlattices. We identify three types of longitudinal interface modes; two GaAs-like and one InSb-like. The frequency and the Raman activity of those modes are in good agreement with theoretical calculations. In addition, it is shown that the interface modes can be used to identify the interface composition (InSb or GaAs) for a variety of samples grown under controlled shutter sequences.

• OSTI ID: 7266000
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 46:11; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ANTIMONIDES
RAMAN SPECTRA
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
SUPERLATTICES
THEORETICAL DATA
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PNICTIDES
SPECTRA
360606* - Other Materials- Physical Properties- (1992-)