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Recent improvements in amorphous silicon-based multijunction modules

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:7261718
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  1. Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, Pennsylvania 18940 (United States)
Advances in intrinsic amorphous silicon and in amorphous silicon carbon alloys have resulted in thin single junction devices with V[sub oc]'s over 1.0 volts and excellent stability with both i-layer materials. Incorporation of improved a-Si:H i-layers and thin microcrystalline n-layers in a-Si/a-Si/a-SiGe triple junction modules has resulted in large area triple junction modules with initial efficiencies as high as 11.35%. These modules exhibit a degradation of [similar to]20% after 1000 hours of light-soaking resulting in [similar to]9% stable modules.
OSTI ID:
7261718
Report Number(s):
CONF-9310273--
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 306:1
Country of Publication:
United States
Language:
English