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Stability of amorphous silicon alloy triple-junction solar cells and modules

Conference · · AIP Conf. Proc.; (United States)
OSTI ID:5361083
Results on reliability test for amorphous silicon alloy triple-junction solar cells and modules are described. It has been found that, for a-SiGe:H pin cells, reduction of the stress in the film is of first importance for stability. Application of low-temperature-deposited microcrystalline p-layer for each sub cell and of thinner i-layers for the middle and the bottom cells improves stability of triple-junction cells, by enhancing the electric field in the i-layers.
Research Organization:
LSI R and D Laboratory, Mitsubishi Electric Corp., 4-1, Mizuhara, Itami 664, Hyogo, Japan
OSTI ID:
5361083
Report Number(s):
CONF-870116-
Conference Information:
Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 157:1
Country of Publication:
United States
Language:
English