Stability of amorphous silicon alloy triple-junction solar cells and modules
Conference
·
· AIP Conf. Proc.; (United States)
OSTI ID:5361083
Results on reliability test for amorphous silicon alloy triple-junction solar cells and modules are described. It has been found that, for a-SiGe:H pin cells, reduction of the stress in the film is of first importance for stability. Application of low-temperature-deposited microcrystalline p-layer for each sub cell and of thinner i-layers for the middle and the bottom cells improves stability of triple-junction cells, by enhancing the electric field in the i-layers.
- Research Organization:
- LSI R and D Laboratory, Mitsubishi Electric Corp., 4-1, Mizuhara, Itami 664, Hyogo, Japan
- OSTI ID:
- 5361083
- Report Number(s):
- CONF-870116-
- Conference Information:
- Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 157:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHEMICAL REACTIONS
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC FIELDS
EQUIPMENT
FILMS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
HYDROGENATION
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RAMAN SPECTRA
SEMICONDUCTOR JUNCTIONS
SILICIDES
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA
STABILITY
THICKNESS
THIN FILMS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHEMICAL REACTIONS
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC FIELDS
EQUIPMENT
FILMS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
HYDROGENATION
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RAMAN SPECTRA
SEMICONDUCTOR JUNCTIONS
SILICIDES
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA
STABILITY
THICKNESS
THIN FILMS