Research on stable, high-efficiency, amorphous silicon multijunction modules. Final subcontract report, 1 May 1990--30 June 1993

Technical Report · Wed Jun 01 04:00:00 EDT 1994

DOI:https://doi.org/10.2172/10159595· OSTI ID:10159595

Arya, R R; Bennett, M; Chen, L; Fieselmann, B; Li, Y; Maley, N; Newton, J; Podlesny, R; Yang, L ^[1]

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1. Solarex Corp., Newtown, PA (United States). Thin Film Div.

This report describes work performed dudng the period 1 July 1992 through 30 June 1993. Dudng this period, major improvements were achieved in the stabilized conversion efficiency of triple-junction modules. These resulted in the demonstration of triple-junction initial conversion efficiency of 11.3% and stabilized conversion efficiency of approximately 9%. Significant advances were made in the deposition of a-Si:H intrinsic layers that led to higher open-circuit voltage and improved stability. Thin microcrystalline n-layers were developed and scaled up for the recombination junctions in triple-junction modules that resulted in higher open-circuit voltage and fill factors. These improvements resulted in the demonstration of a-Si/a-Si/a-SiGe triple-junction modules with initial conversion efficiencies as high as 11.35% and ``stabilized`` efficiencies of about 9%.

• Research Organization: National Renewable Energy Lab., Golden, CO (United States); Solarex Corp., Newtown, PA (United States). Thin Film Div.
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 10159595
• Report Number(s): NREL/TP--411-6841; ON: DE94011826; BR: WM1020000
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501
AMORPHOUS SILICON
AMORPHOUS STATE
EFFICIENCY
HIGH EFFICIENCY
MODULES
PERFORMANCE
PHOTOVOLTAIC CONVERSION
PHOTOVOLTAICS
PROGRESS REPORT
SEMICONDUCTOR JUNCTIONS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS