Large-optical-cavity GaAs- (GaAl)As injection laser with low-loss distributed Bragg reflectors
Journal Article
·
· Appl. Phys. Lett.; (United States)
A large-optical-cavity injection laser with low-loss distributed Bragg reflectors has been realized. The temperature dependence of threshold current and of lasing wavelength clearly showed the DBR mode of operation. At room temperature, the lowest threshold current density thus far achieved was 7 kA/cm/sup 2/. A coupling coefficient of around 50 cm/sup -1/ was estimated from the spectral bandwidth and from the intensity distribution of light scattered from the DBR region.
- Research Organization:
- Department of Electrical Engineering and Computer Sciences, and the Electronics Research Laboratory, University of California, Berkeley, California 94720
- OSTI ID:
- 7260250
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 31:2
- Country of Publication:
- United States
- Language:
- English
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42 ENGINEERING
SEMICONDUCTOR LASERS
PERFORMANCE
ALUMINIUM ARSENIDES
EMISSION SPECTRA
EPITAXY
FABRICATION
FREQUENCY SELECTION
GALLIUM ARSENIDES
LASER CAVITIES
OPERATION
OPTICAL MODES
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
WAVEGUIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ENERGY
GALLIUM COMPOUNDS
LASERS
OSCILLATION MODES
PNICTIDES
SEMICONDUCTOR DEVICES
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420300* - Engineering- Lasers- (-1989)
SEMICONDUCTOR LASERS
PERFORMANCE
ALUMINIUM ARSENIDES
EMISSION SPECTRA
EPITAXY
FABRICATION
FREQUENCY SELECTION
GALLIUM ARSENIDES
LASER CAVITIES
OPERATION
OPTICAL MODES
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
WAVEGUIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ENERGY
GALLIUM COMPOUNDS
LASERS
OSCILLATION MODES
PNICTIDES
SEMICONDUCTOR DEVICES
SPECTRA
420300* - Engineering- Lasers- (-1989)