GaAs-Ga$sub 1$/sub hyphen//sub xAl/sub x/As double-heterostructure injection lasers with distributed Bragg reflectors

Journal Article · Sat May 15 00:00:00 EDT 1976 · Appl. Phys. Lett., v. 28, no. 10, pp. 596-598

OSTI ID:4074081

Tsang, W; Wang, S

Laser oscillation in injection-pumped GaAs-Ga/sub 1-x/Al/sub x/As double- heterostructure distributed Bragg reflector (DBR) lasers is reported. Current threshold density as low as 890 A/cm$sup 2$ in pulsed operation has been obtained at 183$sup 0$K. In this laser diode, the corrugations are placed outside the active part of the laser in the form of an end pair of parallel Bragg reflectors. The observed characteristics of the DBR lasers are found to agree well with the theory. (AIP)

• Research Organization: Department of Electrical Engineering and Computer Sciences, and the Electronics Research Laboratory, University of California, Berkeley, California 94720
• NSA Number: NSA-33-028970
• OSTI ID: 4074081
• Journal Information: Appl. Phys. Lett., v. 28, no. 10, pp. 596-598, Journal Name: Appl. Phys. Lett., v. 28, no. 10, pp. 596-598; ISSN APPLA
• Country of Publication: United States
• Language: English

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