GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating
We report for the first time, the performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR). Stripes of Si/sup + +/ with a period of 2300 A and a dose approx.10/sup 14/ cm/sup -2/ are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 /sup 0/C are obtained. The wavelength tuning rate with temperature is 0.8 A//sup 0/C. The coupling coefficient is estimated to be 15 cm/sup -1/. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.
- Research Organization:
- Department of Electrical Engineering And Computer Sciences, Electronics Research Laboratory, University of California, Berkeley, California 94720
- OSTI ID:
- 7159258
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:4; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
BRAGG REFLECTION
DATA
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
FABRICATION
FEEDBACK
FOCUSING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRATINGS
INFORMATION
INTEGRATED CIRCUITS
ION BEAMS
LASER CAVITIES
LASERS
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
PERFORMANCE
PNICTIDES
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS