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DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants

Journal Article · · IEEE J. Quant. Electron.; (United States)
DOI:https://doi.org/10.1109/3.29260· OSTI ID:5940265
A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that /kappa/ can be increased by more than an order of magnitude over the 15 cm/sup -1/ experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.
Research Organization:
California Univ., Berkeley, CA (USA). Dept. of Electrical Engineering and Computer Sciences; Hughes Research Labs., Malibu, CA (USA)
OSTI ID:
5940265
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
Country of Publication:
United States
Language:
English