Process for producing amorphous and crystalline silicon nitride

Patent · Tue Nov 12 00:00:00 EST 1985

OSTI ID:7256900

Morgan, P E.D.; Pugar, E A

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

• Research Organization: Rockwell International Corp., Canoga Park, CA (United States)
• DOE Contract Number: AC03-78ER01885
• Assignee: Rockwell International Corp., El Segundo, CA (United States)
• Patent Number(s): US 4552740; A
• Application Number: PPN: US 6-704979
• OSTI ID: 7256900
• Resource Relation: Patent File Date: 22 Feb 1985
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON NITRIDES
FABRICATION
AMORPHOUS STATE
TEMPERATURE RANGE 1000-4000 K
WHISKERS
CRYSTALS
MONOCRYSTALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SILICON COMPOUNDS
TEMPERATURE RANGE
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication