skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Process for producing amorphous and crystalline silicon nitride

Abstract

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

Inventors:
;
Publication Date:
Research Org.:
Rockwell International Corp
OSTI Identifier:
7256900
Patent Number(s):
US 4552740; A
Application Number:
PPN: US 6-704979
Assignee:
Rockwell International Corp., El Segundo, CA (United States) OAK; EDB-94-124252
DOE Contract Number:  
AC03-78ER01885
Resource Type:
Patent
Resource Relation:
Patent File Date: 22 Feb 1985
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON NITRIDES; FABRICATION; AMORPHOUS STATE; TEMPERATURE RANGE 1000-4000 K; WHISKERS; CRYSTALS; MONOCRYSTALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Morgan, P.E.D., and Pugar, E.A.. Process for producing amorphous and crystalline silicon nitride. United States: N. p., 1985. Web.
Morgan, P.E.D., & Pugar, E.A.. Process for producing amorphous and crystalline silicon nitride. United States.
Morgan, P.E.D., and Pugar, E.A.. Tue . "Process for producing amorphous and crystalline silicon nitride". United States.
@article{osti_7256900,
title = {Process for producing amorphous and crystalline silicon nitride},
author = {Morgan, P.E.D. and Pugar, E.A.},
abstractNote = {A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 12 00:00:00 EST 1985},
month = {Tue Nov 12 00:00:00 EST 1985}
}