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Title: Process for producing amorphous and crystalline silicon nitride

Abstract

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

Inventors:
 [1];  [2]
  1. (Thousand Oaks, CA)
  2. (Newbury Park, CA)
Publication Date:
Research Org.:
Rockwell International Corp
OSTI Identifier:
865666
Patent Number(s):
US 4552740
Assignee:
Rockwell International Corporation (El Segundo, CA) OAK
DOE Contract Number:  
AC03-78ER01885
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; producing; amorphous; crystalline; silicon; nitride; disclosed; comprises; reacting; disulfide; ammonia; gas; elevated; temperature; preferred; embodiment; form; whiskers; needles; heated; ranging; 900; degree; 1200; produce; retains; whisker; needle; morphological; characteristics; carbide; prepared; substituted; methylamine; hydrocarbon; containing; active; hydrogen-containing; ethylene; temperature ranging; ammonia gas; silicon nitride; preferred embodiment; elevated temperature; silicon carbide; carbon containing; crystalline silicon; comprises reacting; producing amorphous; hydrocarbon containing; /423/

Citation Formats

Morgan, Peter E. D., and Pugar, Eloise A. Process for producing amorphous and crystalline silicon nitride. United States: N. p., 1985. Web.
Morgan, Peter E. D., & Pugar, Eloise A. Process for producing amorphous and crystalline silicon nitride. United States.
Morgan, Peter E. D., and Pugar, Eloise A. Tue . "Process for producing amorphous and crystalline silicon nitride". United States. https://www.osti.gov/servlets/purl/865666.
@article{osti_865666,
title = {Process for producing amorphous and crystalline silicon nitride},
author = {Morgan, Peter E. D. and Pugar, Eloise A.},
abstractNote = {A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1985},
month = {Tue Jan 01 00:00:00 EST 1985}
}

Patent:

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