Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

Journal Article · Wed Feb 15 04:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617020208· OSTI ID:22649649

Zabotnov, S. V.; Zhigunov, D. M. ^[1]; Zelenina, A. A. ^[2]; Kamenskih, I. A.; Kashkarov, P. K. ^[1]

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1. Moscow State University, Faculty of Physics (Russian Federation)
2. Novosibirsk State University (Russian Federation)

The photoluminescence properties of silicon nitride and oxide superlattices fabricated by plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a temperature of 1150°C, photoluminescence peaks at about 1.45 eV are recorded. The peaks are defined by exciton recombination in silicon nanocrystals formed upon annealing. Along with the 1.45-eV peaks, a number of peaks defined by recombination at defects at the interface between the nanocrystals and silicon-nitride matrix are detected. The structures annealed at 900°C exhibit a number of photoluminescence peaks in the range 1.3–2.0 eV. These peaks are defined by both the recombination at defects and exciton recombination in amorphous silicon nanoclusters formed at an annealing temperature of 900°C. The observed features of all of the photoluminescence spectra are confirmed by the nature of the photoluminescence kinetics.

• OSTI ID: 22649649
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
AMORPHOUS STATE
ANNEALING
CHEMICAL VAPOR DEPOSITION
EMISSION SPECTRA
INTERFACES
MATRIX MATERIALS
NANOSTRUCTURES
PHOTOLUMINESCENCE
RECOMBINATION
SILICON
SILICON NITRIDES
SILICON OXIDES
SUPERLATTICES
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K