Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures

Journal Article · Thu Apr 15 04:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610040184· OSTI ID:21562313

Melnik, V P; Popov, V G; Khatsevich, I M; Oberemok, A S ^[1]

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1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

Experimental data on the photoluminescence spectra of Si nanocluster structures obtained after high-temperature annealing (1150 deg. C) of SiO{sub x} films deposited onto Si and subsequent low-temperature annealing of the films at the temperature 450 deg. C in different ambient are reported. It is shown that the photoluminescence intensity substantially increases after low-temperature annealing and the most-pronounced effect is observed after annealing in the oxygen-nitrogen mixture. In this case, the photoluminescence spectrum is shifted to longer wavelengths and shaped as a broad band with a peak around 800 nm. The processes responsible for the increase in the PL intensity on low-temperature annealing in the oxygen-nitrogen mixture are defined by reconstruction of the Si/SiO{sub 2} interfaces and by energy levels formed at the interfaces and involved in recombination of nonequilibrium charge carriers. The quasichemical reactions that bring about the formation of such levels involve oxygen and nitrogen atoms, and the centers, at which the reactions are initiated, are unsaturated valence bonds at the interfaces between Si nanoclusters and the SiO{sub 2} matrix.

• OSTI ID: 21562313
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ATOMS
CHALCOGENIDES
CHARGE CARRIERS
DATA
DISPERSIONS
ELEMENTS
EMISSION
ENERGY LEVELS
EXPERIMENTAL DATA
FILMS
HEAT TREATMENTS
INFORMATION
INTERFACES
LUMINESCENCE
MINERALS
MIXTURES
NANOSTRUCTURES
NITROGEN
NONMETALS
NUMERICAL DATA
OXIDE MINERALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PEAKS
PHOTOLUMINESCENCE
PHOTON EMISSION
RECOMBINATION
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0400-1000 K