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Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix

Journal Article · · Semiconductors
;  [1]
  1. Moscow State University, Faculty of Physics (Russian Federation)
Photoluminescence properties of the structures of amorphous and crystalline silicon nanoclusters with average sizes no larger than 4 nm in an erbium-doped silicon dioxide matrix were studied. It was found that the photoluminescence lifetime of Er{sup 3+} ions at a wavelength of 1.5 {mu}m decreases from 5.7 to 2.0 ms and from 3.5 to 1.5 ms in samples with amorphous nanoclusters and with nanocrystals, respectively, as the Er{sup 3+} concentration increases from 10{sup 19} to 10{sup 21} cm{sup -3}. The decrease in the erbium photoluminescence lifetime with the ion concentration is attributed to the effects of concentration-related quenching and residual implantation-induced defects. The difference between lifetimes for samples with amorphous and crystalline nanoclusters is interpreted as the effect of different probabilities of energy back transfer from Er{sup 3+} ions to the solid-state matrix in the structures under consideration.
OSTI ID:
21562320
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 44; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English