Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix
- Moscow State University, Faculty of Physics (Russian Federation)
Photoluminescence properties of the structures of amorphous and crystalline silicon nanoclusters with average sizes no larger than 4 nm in an erbium-doped silicon dioxide matrix were studied. It was found that the photoluminescence lifetime of Er{sup 3+} ions at a wavelength of 1.5 {mu}m decreases from 5.7 to 2.0 ms and from 3.5 to 1.5 ms in samples with amorphous nanoclusters and with nanocrystals, respectively, as the Er{sup 3+} concentration increases from 10{sup 19} to 10{sup 21} cm{sup -3}. The decrease in the erbium photoluminescence lifetime with the ion concentration is attributed to the effects of concentration-related quenching and residual implantation-induced defects. The difference between lifetimes for samples with amorphous and crystalline nanoclusters is interpreted as the effect of different probabilities of energy back transfer from Er{sup 3+} ions to the solid-state matrix in the structures under consideration.
- OSTI ID:
- 21562320
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
CHALCOGENIDES
CHARGED PARTICLES
DEFECTS
DOPED MATERIALS
ELEMENTS
EMISSION
ERBIUM
ERBIUM IONS
IONS
LIFETIME
LUMINESCENCE
MATERIALS
METALS
MINERALS
NANOSTRUCTURES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PROBABILITY
QUENCHING
RARE EARTHS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SOLIDS
WAVELENGTHS
CHALCOGENIDES
CHARGED PARTICLES
DEFECTS
DOPED MATERIALS
ELEMENTS
EMISSION
ERBIUM
ERBIUM IONS
IONS
LIFETIME
LUMINESCENCE
MATERIALS
METALS
MINERALS
NANOSTRUCTURES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PROBABILITY
QUENCHING
RARE EARTHS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SOLIDS
WAVELENGTHS