Photoluminescence of erbium ions in heterostructures with silicon nanocrystals

Journal Article · Sun Oct 15 04:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606100125· OSTI ID:21088663

Shalygina, O A; Teterukov, S A; Timoshenko, V Yu; Kashkarov, P K ^[1]; Zacharias, M ^[2]

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1. Moscow State University, Faculty of Physics (Russian Federation)
2. Max-Planck-Institut fuer Mikrostrukturphysik (Germany)

Photoluminescence properties of erbium-doped silicon dioxide layers containing silicon nanocrystals with 1.5-4.5 nm average size are investigated. It is found that the intensity and mean lifetime of the Er{sup 3+}-ion photoluminescence depend on the nanocrystal size, optical pump intensity, and temperature. The results obtained are explained both by the effect of the local environment on Er{sup 3+} ions and by the manifestation of nonradiative deexcitation of ions caused by the transfer of energy back into the solid-state matrix and the Auger processes.

• OSTI ID: 21088663
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DE-EXCITATION
DOPED MATERIALS
ERBIUM IONS
LAYERS
LIFETIME
NANOSTRUCTURES
PHOTOLUMINESCENCE
SILICON
SILICON OXIDES