Erbium-doped slot waveguides containing size-controlled silicon nanocrystals
- Institute of Applied Physics, TU Bergakademie Freiberg, D-09596 Freiberg (Germany)
- Institute of Materials Science, TU Bergakademie Freiberg, D-09596 Freiberg (Germany)
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia)
Silicon based slot waveguides with a slot containing Si nanocrystals (Si-nc) and Erbium ions (Er{sup 3+}) inside a silica matrix were prepared using sputter deposition and low-energy ion implantation. This sequence enabled independent optimization of nanocrystal formation and Er{sup 3+} incorporation parameters. Using a superlattice approach, the size of the Si-nc inside the slot could be controlled and optimized for maximum Er{sup 3+} luminescence yield at 1.54 μm. Er{sup 3+} is found to be efficiently pumped by Si-nc of sizes around 3 to 4 nm. Increasing Er{sup 3+} photoluminescence at 1.54 μm with increasing post-implantation annealing temperatures up to 1000 °C is attributed to annealing of matrix or Si-nc interface defects mainly. Additionally, a dependence of the Er{sup 3+} luminescence intensity on both the excitation and emission linear polarization orientation is shown, which demonstrates efficient field enhancement in sputtered slot waveguide structures.
- OSTI ID:
- 22402905
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 16 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoluminescence of erbium ions in heterostructures with silicon nanocrystals
On optical activity of Er{sup 3+} ions in Si-rich SiO{sub 2} waveguides