Characterization of vapor-deposited tin-doped indium oxide films

Journal Article · Fri Aug 01 00:00:00 EDT 1986 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2108972· OSTI ID:7252810

Enloe, J H; Wirtz, G P

Polycrystalline tin-doped indium oxide films were vapor deposited on yttria-stabilized zirconia substrates by an electrochemical techniqiue. Film growth conditions were dictated by the sublimation reactions of the oxides of tin and indium. Growth was monitored by cell current and correlated with final film thickness. The composition was measured spectroscopically and correlated with electronic measurements on the films. The resultant morphologies of the films are discussed in terms of the mechanism of the growth process. The marked preferred crystallographic orientation observed in all films is rationalized on the basis of this growth model.

• Research Organization: Dept. of Ceramic Engineering, Univ. of Illinois at Urbana-Champaign, Urbana, IL 61801
• OSTI ID: 7252810
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 133:8; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
CHEMISTRY
CRYSTAL DOPING
CRYSTALLOGRAPHY
CRYSTALS
CURRENTS
DEPOSITION
DIMENSIONS
ELECTRIC CURRENTS
ELECTROCHEMISTRY
ELEMENTS
EVAPORATION
FILMS
INDIUM COMPOUNDS
INDIUM OXIDES
KINETICS
METALS
MONITORING
MORPHOLOGY
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
POLYCRYSTALS
REACTION KINETICS
SPECTROSCOPY
STABILIZATION
SUBLIMATION
SUBSTRATES
SURFACE COATING
THICKNESS
TIN
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
YTTRIUM OXIDES
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES