Characterization of vapor-deposited tin-doped indium oxide films

Journal Article · Fri Aug 01 00:00:00 EDT 1986 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2108972· OSTI ID:7252810

Enloe, J H; Wirtz, G P

Polycrystalline tin-doped indium oxide films were vapor deposited on yttria-stabilized zirconia substrates by an electrochemical techniqiue. Film growth conditions were dictated by the sublimation reactions of the oxides of tin and indium. Growth was monitored by cell current and correlated with final film thickness. The composition was measured spectroscopically and correlated with electronic measurements on the films. The resultant morphologies of the films are discussed in terms of the mechanism of the growth process. The marked preferred crystallographic orientation observed in all films is rationalized on the basis of this growth model.

• Research Organization: Dept. of Ceramic Engineering, Univ. of Illinois at Urbana-Champaign, Urbana, IL 61801
• OSTI ID: 7252810
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 133:8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM OXIDES
CHEMICAL VAPOR DEPOSITION
CRYSTALLOGRAPHY
MORPHOLOGY
ZIRCONIUM OXIDES
CHEMICAL REACTION KINETICS
CRYSTAL DOPING
ELECTRIC CURRENTS
ELECTROCHEMISTRY
FILMS
MONITORING
POLYCRYSTALS
SPECTROSCOPY
STABILIZATION
SUBLIMATION
SUBSTRATES
THICKNESS
TIN
YTTRIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMISTRY
CRYSTALS
CURRENTS
DEPOSITION
DIMENSIONS
ELEMENTS
EVAPORATION
INDIUM COMPOUNDS
KINETICS
METALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
REACTION KINETICS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
ZIRCONIUM COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies