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Oxygen diffusion in vapor-deposited indium oxide films

Journal Article · · J. Am. Ceram. Soc.; (United States)

Indium oxide has been considered as a promising material for solar collector reflectors. Diffusion measurements were made between 1000 and 1300 K on films of In/sub 2/O/sub 3/ by electrochemical techniques using an yttria-stabilized zirconia solid electrolyte. At atmospheric oxygen pressures, diffusion invariably occurred via an oxygen interstitial mechanism. The diffusion coefficient decreased with decreasing oxygen pressure. 33 refs.

Research Organization:
Univ of Ill, Urbana, USA
OSTI ID:
5167818
Journal Information:
J. Am. Ceram. Soc.; (United States), Journal Name: J. Am. Ceram. Soc.; (United States) Vol. 64:12; ISSN JACTA
Country of Publication:
United States
Language:
English