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Preparation and characterization of indium-tin-oxide deposited by direct thermal evaporation of metal indium and tin

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2100819· OSTI ID:5975307

Films of the transparent conductor-tin-oxide (ITO) have been deposited successfully by direct thermal evaporation of metallic indium and tin in an oxygen ambient. Various techniques, such as scanning and transmission electron microscopy, x-ray diffraction, electron microprobe analysis, Hall measurements, and optical transmission measurements, were applied to determine the crystal structure and to measure grain size, tin concentration, optical transmittance, electron concentration, and the mobility of the ITO films. It is found that the key point in reducing the resistivity of the ITO film is by controlling the tin to indium weight ratio to an optimum value of 3 to 1. ITO films with resistivity as low as 1.8 x 10/sup -4/ ..cap omega..-cm and an average optical transmittance as high as 90% can be achieved reproducibly. The films are polycrystalline with a bcc structure and a grain size of approximately 500A.

Research Organization:
Dept. of Electrical Engineering, National Taiwan Univ., Taipei
OSTI ID:
5975307
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 134:8A; ISSN JESOA
Country of Publication:
United States
Language:
English