Vacuum evaporated indium tin oxide layers
- Sharana Basaveshwar Public School and Composite Pre-University College, Gulburga (India)
- Central Electro Chemical Research Inst., Karaikudi (India)
- Annamalai Polytechnic, Chettinad (India)
Indium Tin Oxide (ITO) film have been prepared by sequential vacuum deposition of indium and tin on plain glass followed by oxidation at temperatures around 400--650 C. By a proper control of the time of evaporation and the heating current the concentration of vacuum evaporated indium was maintained constant and tin concentration was varied in the range of 10--60% by weight. ITO films with good optical and electrical properties can be obtained by adjusting the ratio of Sn:In in the range of 1:9 to 1:35 after heat-treatment at 400--600 C. The films exhibit a sheet resistance of 20 ohms per square with an optical transmission of 60% at 500 nm when the Sn:In ratio was maintained at 1:9. The film was found suitable for ITO/Si Solar Cells and as substrates for photo anodes in PEC cells.
- OSTI ID:
- 197636
- Report Number(s):
- CONF-950793--; ISBN 0-8194-1890-0
- Country of Publication:
- United States
- Language:
- English
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