Orientation filtering for crystalline films
Patent
·
OSTI ID:7249303
A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations. 7 figs.
- Assignee:
- Massachusetts Inst. of Tech., Cambridge, MA (United States)
- Patent Number(s):
- US 4632723; A
- Application Number:
- PPN: US 6-481096
- OSTI ID:
- 7249303
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360602 -- Other Materials-- Structure & Phase Studies
FILMS
GRAIN ORIENTATION
MICROSTRUCTURE
ORIENTATION
RECRYSTALLIZATION
SUBSTRATES
VOIDS
360102* -- Metals & Alloys-- Structure & Phase Studies
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360602 -- Other Materials-- Structure & Phase Studies
FILMS
GRAIN ORIENTATION
MICROSTRUCTURE
ORIENTATION
RECRYSTALLIZATION
SUBSTRATES
VOIDS