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U.S. Department of Energy
Office of Scientific and Technical Information

Orientation filtering for crystalline films

Patent ·
OSTI ID:7249303
A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations. 7 figs.
Assignee:
Massachusetts Inst. of Tech., Cambridge, MA (United States)
Patent Number(s):
US 4632723; A
Application Number:
PPN: US 6-481096
OSTI ID:
7249303
Country of Publication:
United States
Language:
English