The band gap of perfectly disordered'' Ga[sub 0. 52]In[sub 0. 48]P

Conference · Thu Jun 30 04:00:00 EDT 1994 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:7247358

DeLong, M C; Mowbray, D J; Hogg, R A; Skolnick, M S ^[1]; Williams, J E; Meehan, K ^[2]; Kurtz, S R; Olson, J M ^[3]; Wu, M C ^[4]; Hopkinson, M ^[5]

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1. Department of Physics, University of Sheffield, Sheffield S3 7RH (United Kingdom)
2. Polaroid Corp., 21 Osborn St., Cambridge Massachusetts 02139 (United States)
3. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
4. Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, 30043 (Taiwan, Province of China)
5. SERC Central Facility for III-V Materials, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DU (United Kingdom)

Because the phenomenon of ordering in Ga[sub 0.52]In[sub 0.48]P reduces the optical band gap, the amount of band gap reduction is often taken as an indicator of the extent of ordering. For such an association to be meaningful, the band gap of the perfectly disordered'' material must be known. Values have been reported which vary by as much as 40 meV, whereas the total ordering-induced band gap reduction measured to date is less than 135 meV. In this paper we report that studies of Ga[sub 0.52]In[sub 0.48]P grown by a variety of techniques and, in some cases, subsequently subjected to disordering conditions lead to a value of the low temperature band gap of 2.015[plus minus]0.007 eV.

• OSTI ID: 7247358
• Report Number(s): CONF-9310273--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 306:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ENERGY GAP
EPITAXY
EXCITONS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LATTICE PARAMETERS
LIQUID PHASE EPITAXY
LUMINESCENCE
MOLECULAR BEAM EPITAXY
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
QUASI PARTICLES
TEMPERATURE RANGE
TEMPERATURE RANGE 0000-0013 K