Homogeneous and inhomogeneous linewidths of excitons in partially ordered Ga[sub 0. 52]In[sub 0. 48]P

Journal Article · Mon Oct 31 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112742· OSTI ID:6841549

Grossmann, P; Feldmann, J; Goebel, E O; Thomas, P ^[1]; Arent, D J; Bertness, K A; Olson, J M ^[2]

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1. Department of Physics and Materials Sciences Center, Philipps-University of Marburg, 35032 Marburg (Germany)
2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We report picosecond four-wave mixing experiments on Ga[sub 0.52]In[sub 0.48]P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a more disordered as compared to a partially ordered structure. Whereas the former shows the normal alloy behavior, the behavior of the partially ordered sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means, in particular, that the main origin of the inhomogeneous broadening is different for the disordered and ordered case. In addition, a polarization dependence of the four-wave mixing signal is only observed for the more disordered sample.

• DOE Contract Number: AC36-83CH10093
• OSTI ID: 6841549
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:18; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
DOMAIN STRUCTURE
EPITAXY
EXCITONS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LINE WIDTHS
MICROSTRUCTURE
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTO-INDUCED TRANSIENT SPECTROSCOPY
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SPECTROSCOPY
VAPOR PHASE EPITAXY