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Magnetic-field-dependent excitonic photoluminescence linewidth in In sub 0. 48 Ga sub 0. 52 P semiconductor alloys

Journal Article · · Physical Review, B: Condensed Matter; (United States)
;  [1]; ;  [2]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
  2. Department of Physics, Emory University, Atlanta, Georgia 30322 (United States)
We report the observation of a magnetic-field-dependent excitonic photoluminescence linewidth in In{sub 0.48} Ga{sub 0.52}P semiconductor alloys (lattice matched to GaAs). The measurements were made at 1.4 K and the magnetic field ranged between 0 and 13.6 T. The photoluminescence peak energies ranged between 1.976 and 1.995 eV while the full width at half maximum linewidths varied from 4.3 to 6.0 meV. The linewidth variation is compared with several calculations which take into account the potential fluctuations caused by the disorder of the alloy components.
DOE Contract Number:
AC04-76DP00789
OSTI ID:
7017820
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 46:11; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English