Effect of exciton localization and delocalization on magnetic-field-dependent photoluminescence linewidths in semiconductors
Conference
·
OSTI ID:10181570
Theory and data are presented for the photoluminescence linewidth in ordered and disordered semiconductor alloys (In{sub 0.48}Ga{sub 0.52}P) at low temperatures. In disordered (ordered) systems, the linewidth is due to exciton localization (exciton-impurity scattering) and increases (decreases) as a function of the field in agreement with the data.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10181570
- Report Number(s):
- SAND--93-0832C; CONF-930831--2; ON: DE93018860
- Country of Publication:
- United States
- Language:
- English
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Journal Article
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Thu Jul 15 00:00:00 EDT 1993
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Magnetic-field-dependent excitonic photoluminescence linewidth in In sub 0. 48 Ga sub 0. 52 P semiconductor alloys
Journal Article
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Tue Sep 15 00:00:00 EDT 1992
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OSTI ID:7017820
Exciton magnetoluminescence studies in ordered and disordered In{sub 0.48}Ga{sub 0.52}P semiconductor alloys
Conference
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Wed Dec 30 23:00:00 EST 1992
·
OSTI ID:10121387