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Title: Effect of exciton localization and delocalization on magnetic-field-dependent photoluminescence linewidths in semiconductors

Abstract

Theory and data are presented for the photoluminescence linewidth in ordered and disordered semiconductor alloys (In{sub 0.48}Ga{sub 0.52}P) at low temperatures. In disordered (ordered) systems, the linewidth is due to exciton localization (exciton-impurity scattering) and increases (decreases) as a function of the field in agreement with the data.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10181570
Report Number(s):
SAND-93-0832C; CONF-930831-2
ON: DE93018860
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: 9. international conference on luminescence and optical spectroscopy of condensed matter,Storrs, CT (United States),9-13 Aug 1993; Other Information: PBD: [1993]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM PHOSPHIDES; PHOTOLUMINESCENCE; GALLIUM PHOSPHIDES; LINE WIDTHS; MAGNETIC FIELDS; EXCITONS; 360606; PHYSICAL PROPERTIES

Citation Formats

Lyo, S K, Jones, E D, and Kurtz, S R. Effect of exciton localization and delocalization on magnetic-field-dependent photoluminescence linewidths in semiconductors. United States: N. p., 1993. Web.
Lyo, S K, Jones, E D, & Kurtz, S R. Effect of exciton localization and delocalization on magnetic-field-dependent photoluminescence linewidths in semiconductors. United States.
Lyo, S K, Jones, E D, and Kurtz, S R. Sun . "Effect of exciton localization and delocalization on magnetic-field-dependent photoluminescence linewidths in semiconductors". United States. https://www.osti.gov/servlets/purl/10181570.
@article{osti_10181570,
title = {Effect of exciton localization and delocalization on magnetic-field-dependent photoluminescence linewidths in semiconductors},
author = {Lyo, S K and Jones, E D and Kurtz, S R},
abstractNote = {Theory and data are presented for the photoluminescence linewidth in ordered and disordered semiconductor alloys (In{sub 0.48}Ga{sub 0.52}P) at low temperatures. In disordered (ordered) systems, the linewidth is due to exciton localization (exciton-impurity scattering) and increases (decreases) as a function of the field in agreement with the data.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {8}
}

Conference:
Other availability
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