Photoluminescence and photoluminescence excitation spectroscopy in ordered and disordered Ga[sub 0. 52]In[sub 0. 48]P

Conference · Tue Dec 01 04:00:00 EST 1992 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:7050939

DeLong, M C; Hogg, R A; Mowbray, D J ^[1]; Hopkinson, M ^[2]; Skolnick, M S ^[1]; Taylor, P C ^[3]; Olson, J M; Kurtz, S R; Kibbler, A E ^[4]

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1. Department of Physics, University of Sheffield, Sheffield S3 7RH (United Kingdom)
2. Department of Electrical and Electronic Engineering, University of Sheffield, Sheffield S3 7RH (United Kingdom)
3. Physics Department, 201 JFB, University of Utah, Salt Lake City, Utah 84112 (United States)
4. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

The band gap of Ga[sub 0.52]In[sub 0.48]P varies considerably, depending on conditions of growth. This is a result of ordering in the CuPt structure. Details of the ordering also lead to more subtle optical effects. We report here on photoluminescence (PL) and photoluminescence excitation (PLE) measurements on ordered and disordered Ga[sub 0.52]In[sub 0.48]P. The dominant high energy emission process in disordered GaInP has been established to be excitonic, but the exciton trapping energy is not unique. PLE from ordered Ga[sub 0.52]In[sub 0.48]P shows significant tailing of electronic states and a band edge'' which depends on detection energy.

• OSTI ID: 7050939
• Report Number(s): CONF-9205115--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 268:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL GROWTH
ENERGY GAP
EPITAXY
EXCITONS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MOLECULAR BEAM EPITAXY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
QUASI PARTICLES
VAPOR PHASE EPITAXY