The metal adatom on GaAs(110): A surface negative U center

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7237544

Allan, G; Lannoo, M ^[1]

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1. Inst. Superieur d'Electronique du Nord, Lille (France)

Metallic atom adsorption on the GaAs(110) surface is studied in the tight-bending approximation. By comparison with the experimental results and the lack of As localized states in the band gap, the authors first show that adsorption cannot occur on a completely unrelaxed surface. The other point concerns the Fermi level position which is located in a minimum density of states. They show that adatom relaxation is quite important and must be considered as it strongly modifies the energy to add or to remove an electron from the crystal. They show that a possible explanation of the observed adatom level energies is the existence of a negative U center.

• OSTI ID: 7237544
• Report Number(s): CONF-910115--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
ADSORPTION
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
COULOMB FIELD
DIFFUSION
ELECTRIC FIELDS
ELEMENTS
ENERGY LEVELS
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
INTERFACES
METALS
PERMEABILITY
PNICTIDES
SEMIMETALS
SORPTION
SURFACE PROPERTIES
TRANSITION ELEMENTS