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X-ray structural studies of epitaxial yttrium silicide on Si(111)

Journal Article · · Journal of Materials Research; (United States)
; ;  [1];  [2];  [3]
  1. Department of Electrical Engineering and Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
  2. Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
  3. Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)
We performed a series of glancing angle and reflection x-ray diffraction experiments to study both the in-plane and out-of-plane structure of epitaxial YSi[sub 2[minus][ital x]] films grown on Si(111), with thicknesses ranging from 85 A to 510 A. These measurements allowed us to characterize the mean film lattice constants, the position correlation lengths of the film, and the presence and extent of strain as a function of film thickness. We find that the strain along the basal plane increases as a function of increasing thickness to approximately 1% in the 510 A film; the corresponding out-of-plane strain is such that the film unit cell volume increases as a function of thickness. The corresponding in-plane microscopic strain varies from 0.5% for the 85 A film to 0.3% for the 510 A film. We relate our results to the mode of film growth and the presence of pinholes in the films.
OSTI ID:
7233578
Journal Information:
Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 9:6; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English

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