X-ray structural studies of epitaxial yttrium silicide on Si(111)
Journal Article
·
· Journal of Materials Research; (United States)
- Department of Electrical Engineering and Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
- Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
- Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)
We performed a series of glancing angle and reflection x-ray diffraction experiments to study both the in-plane and out-of-plane structure of epitaxial YSi[sub 2[minus][ital x]] films grown on Si(111), with thicknesses ranging from 85 A to 510 A. These measurements allowed us to characterize the mean film lattice constants, the position correlation lengths of the film, and the presence and extent of strain as a function of film thickness. We find that the strain along the basal plane increases as a function of increasing thickness to approximately 1% in the 510 A film; the corresponding out-of-plane strain is such that the film unit cell volume increases as a function of thickness. The corresponding in-plane microscopic strain varies from 0.5% for the 85 A film to 0.3% for the 510 A film. We relate our results to the mode of film growth and the presence of pinholes in the films.
- OSTI ID:
- 7233578
- Journal Information:
- Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 9:6; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
Similar Records
A study of strain in thin epitaxial films of yttrium silicide on Si(111)
Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)
Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111)
Journal Article
·
Mon Jan 31 23:00:00 EST 1994
· Journal of Applied Physics; (United States)
·
OSTI ID:5362337
Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)
Journal Article
·
Thu Jul 31 20:00:00 EDT 2014
· Surface Science
·
OSTI ID:1140388
Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111)
Journal Article
·
Fri Apr 15 00:00:00 EDT 2005
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:20665143
Related Subjects
36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
EPITAXY
FILMS
LATTICE PARAMETERS
MICROSTRUCTURE
SCATTERING
SILICIDES
SILICON COMPOUNDS
STRAINS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
YTTRIUM COMPOUNDS
YTTRIUM SILICIDES
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
EPITAXY
FILMS
LATTICE PARAMETERS
MICROSTRUCTURE
SCATTERING
SILICIDES
SILICON COMPOUNDS
STRAINS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
YTTRIUM COMPOUNDS
YTTRIUM SILICIDES