A study of strain in thin epitaxial films of yttrium silicide on Si(111)

Journal Article · Tue Feb 01 04:00:00 EST 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.356387· OSTI ID:5362337

Siegal, M F ^[1]; Martinez-Miranda, L J; Santiago-Aviles, J J; Graham, W R ^[2]; Siegal, M P ^[3]

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1. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
2. Department of Electrical Engineering and Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
3. Sandia National Laboratory, Albuquerque, New Mexico 87111 (United States)

We present the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on Si(111), with thicknesses ranging from 14 to 100 A. The macroscopic strain along the out-of-plane direction for films containing pits or pinholes follows the trend observed previously in films of thicknesses up to 510 A. The out-of-plane lattice parameter decreases linearly with film thickness. We show preliminary evidence that pinhole-free films do not follow the above trend, and that strain in these films has the opposite sign than in films with pinholes. Finally, our results also indicate that the mode of growth, coupled to the interfacial thermal properties of the films, affects the observed value for the strain in the films.

• OSTI ID: 5362337
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 75:3; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360103* -- Metals & Alloys-- Mechanical Properties
COHERENT SCATTERING
DIFFRACTION
DIMENSIONS
EPITAXY
FILMS
LATTICE PARAMETERS
SCATTERING
SILICIDES
SILICON COMPOUNDS
STRAINS
THICKNESS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
YTTRIUM COMPOUNDS
YTTRIUM SILICIDES