Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111)

Journal Article · Fri Apr 15 04:00:00 EDT 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.71.165306· OSTI ID:20665143

Rogero, C; Andres, P.L. de; Martin-Gago, J A ^[1]

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1. Instituto Ciencia de Materiales de Madrid-CSIC, 28049-Cantoblanco (Spain)

The surface atomic structure of thin layers of three-dimensional yttrium silicide epitaxially grown on Si(111) 7x7 has been investigated by means of dynamical low-energy electron diffraction analysis. We determine the interlayer distances as well as the lateral and/or vertical relaxations of the atoms in the superficial planes. The epitaxial silicide consists of stacked hexagonal rare-earth planes and graphitelike Si planes with an ordered arrangement of Si vacancies. The ordered net of Si vacancies in the inner planes is responsible for the lateral relaxations of the surrounding Si atoms. The topmost layer does not present a graphitelike structure, forming a buckled Si layer with no vacancies. One of the three Si atoms in the lower plane of this bilayer is closer to the yttrium layer due to the presence of the vacancy in the last Si plane just below. This produces vertical relaxation in the termination layer.

• OSTI ID: 20665143
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 16 Vol. 71; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
ELECTRON DIFFRACTION
EPITAXY
LAYERS
RELAXATION
SILICON
SURFACES
VACANCIES
YTTRIUM SILICIDES