Theoretical Limit to the Laser Threshold Current Density in an InGaN Quantume Well Laser
Journal Article
·
· Applied Physics Letters
OSTI ID:723
- Sandia National Laboratories
This paper describes an investigation of the spontaneous emission limit to the laser threshold current density in an InGaN quantum well laser. The peak gain and spontaneous emission rate as functions of carrier density are com- puted using a microscopic laser theory. From these quantities, the minimum achievable threshold current density is determined for a given threshold gain. The dependence on quantum well width, and the effects of inhomogeneous broadening due to spatial alloy variations are discussed. Also, comparison with experiments is made.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 723
- Report Number(s):
- SAND98-2259J; ON: DE00000723
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters
- Country of Publication:
- United States
- Language:
- English
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