Microscopic theory of gain for an InGaN/AlGaN quantum well laser

Journal Article · Fri Oct 31 23:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120155· OSTI ID:544762

Chow, W W; Wright, A F ^[1]; Girndt, A; Jahnke, F; Koch, S W ^[2]

---

1. Sandia National Laboratories Albuquerque, New Mexico 85718-0601 (United States)
2. Department of Physics and Material Sciences Center Philipps University Renthof 5, 35032 Marburg (Germany)

This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 544762
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 71; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
EXCITONS
GAIN
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
INDIUM NITRIDES
SEMICONDUCTOR LASERS
SOLID-STATE PLASMA
VACANCIES