Quantum-well width dependence of threshold current density in InGaN lasers

Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124336· OSTI ID:351840

Chow, W W ^[1]; Amano, H; Takeuchi, T ^[2]; Han, J ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)
2. Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468 (Japan)

The quantum-confined Stark effect was found to result in a strong quantum-well width dependence of threshold current density in strained group-III nitride quantum well lasers. For an In{sub 0.2}Ga{sub 0.8}N/GaN structure with quantum-well width in the neighborhood of 3.5 nm, our analysis shows that the reduction in spontaneous emission loss by the electron{endash}hole spatial separation outweighs the corresponding reduction in gain to produce a threshold current-density minimum. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 351840
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 75; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CURRENT DENSITY
GAIN
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
INDIUM NITRIDES
SEMICONDUCTOR LASERS
STARK EFFECT
THRESHOLD CURRENT